Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors
نویسندگان
چکیده
Microscopic features of carrier localization, minibands, and spectral currents InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied investigated in detail. In the presence momentum phase-relaxed elastic scattering processes, we show that a self-consistent non-equilibrium Green's function method within effective mass approximation can be an tool to fairly predict miniband transport properties their dependence on design parameters such as layer thickness, periods, temperature, built-in potential. To benchmark this model, first evaluate band infinite T2SL with periodic boundary conditions, employing envelope finite-difference discretization perturbative eight-band $\bf{k.p}$ framework. The strong constituent material thicknesses band-edge positions masses offers primary guideline performance-specific detectors for wide range operations. Moving forward, demonstrate using finite structure framework, one estimate bandgap, band-offsets, density states, spatial overlap which comply well results experimental data. Finally, superiority is illustrated via reasonable estimation alignments barrier-based multi-color non-periodic complex structures. This study, therefore, provides deep physical insights into confinements broken-gap heterostructures sets perfect stage perform calculations full-quantum picture.
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i Acknowledgments ii List of original papers v
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ژورنال
عنوان ژورنال: Journal of Physics D
سال: 2021
ISSN: ['1361-6463', '0022-3727']
DOI: https://doi.org/10.1088/1361-6463/ac0702